[갈무리] SD램 식별법

출처 : http://my.dreamwiz.com/bicter

  이미 구형이 된 지 오랜 SD램 식별법을 담은 글을 저장해 둔 것이었는데, 원 출처였던 홈페이지는 드림위즈가 개인 홈페이지 운영을 중단하여 없어졌다.


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▶  삼성 램 식별법

(참고 : 설명을 위해서 띄어쓰기를 했습니다.)

DRAM

KM

4

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1.  Samsung Memory
2.  DRAM (4)
3.  Organization
     1: x1 bit   4: x4 bit   8: x8 bit  16: x16 bit   32: x32 bit
4.  Operating Voltage [C: 5V V: 3.3V U: 3.0V Q: 2.5V]
5.  Depth
    [1: 1M 2: 2M 4: 4M 8: 8M 16: 16M *25: 256Kx16(4MD) *51: 512Kx32(16MD)]
6.  Refresh
     0: 1K(4MD), 4K(16MD), 8K(64MD),
     1: 512(4MD), 2K(16MD), 4K(64MD),
     2: 1K(16MD)
7.  Mode
     0: FP Mode 3: FP(Quad CAS) Mode 4: EDO Mode 5: EDO(QuadCAS)Mode
8.  Revision [Blank: 1st Gen. A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen.]
9.  Package Type [J: SOJ K: SOJ (Shrinked PKG) T: TSOP 2 S: TSOP 2
     (Shrinked PKG) C: CSP]
10. Test Temperature [Blank: Normal (0~70C) E: Extended temp. (-25~85C)
     I: Industrialtemp. (-40~85C)]
11. Power (DC Current) [Blank: Normal L: Low Power with Self Refresh]
12. Speed [4: 40ns 45: 45ns 5: 50ns 55: 55ns 6: 60ns 7: 70ns]



SDRAM Component (Include PC100)

KM

4

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1.  Samsung Memory
2.  DRAM (4)
3.  Organization [4: x4 8: x8 16: x16 32: x32]
4.  Feature [S: SDRAM]
5.  Density [1: 1M 2: 2M 4: 4M 8: 8M 16: 16M 32: 32M 64: 64M 28: 128M ]
6.  Refresh [0: 4K 1: 2K 2: 8K 3: 16K ]
7.  # of Banks [2: 2 banks 3: 4 banks ]
8.  Interface (VDDQ)
     [0: LVTTL (3.3V) 1: SSTL_3 (3.3V) 2: SSTL_2 (2.5V) 3: LVTTL (2.5V) ]
9.  Revision [Blank: 1st Gen. A: 2nd Gen. B: 3rd Gen. ]
10. Package Type [T: TSOP II (400mil) B: BGA C: uBGA (CSP) ]
11. Temperature [Blank: Normal (0~70C) E: Extended (-25~85C) I: Industrial
     (-40~85C) ]
12. Power (G/F for 3.3V VDD & D/E for 2.5V VDD G: Auto & Self refresh (3.3V)
     F: Auto & Self refresh with Low power D: Auto & Self refresh (2.5V)
     E: Auto & Self refresh with Low power
13. Min. Cycle Time (Max. Frequency)
     [7: 7ns (143MHz)
      8: 8ns (125MHz
      10: 10ns 100MHz) L: CL3 100MHz H: CL2 & CL3 100MHz ]




SDRAM Module (Include PC100)


KM

4

X

XX

S

X

X

X

X

X

X

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X

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1.  Samsung Memory
2.  Memory Module
3.  DIMM Configuration
    [3: 8 Byte DIMM (168 & 200pin) 4: 8 Byte SODIMM (144pin) ]
4. Data Bit
   [50: x72/ECC w/o PLL+Register DIMM with SPD for 168pin(Intel)
    66: x64 Unbuffered DIMM with SPD
    74: x72/ECC Unbuffered DIMM with SPD
    75: x72/ECC PLL+Register DIMM with SPD for 168pin(JEDEC)
    77: x72/ECC PLL+Register DIMM with SPD for 168pin(Intel)
    78: x72/ECC PLL+Register DIMM with SPD for 200pin(JEDEC) ]
5. Feature [S: SDRAM ]
6. Density [1: 1M 2: 2M 4: 4M 8: 8M 9: 8M (for 128Mb/512Mb) 16: 16M 17: 16M     (for 128Mb/512Mb) 32: 32M 33: 32M (for 128Mb/512Mb) 64: 64M 65: 64M (for     128Mb/512Mb) 28: 128M 29: 128M (for 128Mb/512Mb) ]
7. Refresh, # of Banks in Comp. & Interface
    0: 4K/64ms Refresh, 2 Banks & LVTTL
    1: 2K/32ms Refresh, 2 Banks & LVTTL
    2: 4K/64ms Refresh, 4 Banks & LVTTL
    3: 4K/64ms Refresh, 2 Banks & SSTL
    4: 4K/64ms Refresh, 4 Banks & STL
    5: 8K/64ms Refresh, 4 Banks & LVTTL
    6: 16K/128ms Refresh, 4 Banks & LVTTL
8.  Composition Component
     [0: x4 3: x8 4: x16 5: x32 7: x4 Stack ]
9.  Component Revision
     [Blank: 1st Gen. A: 2nd Gen. B: 3rd Gen. C: 4th Gen.]
10. Package Type
     [T: TSOP II (400mil) B: BGA C: uBGA (CSP) ]
11. PCB Revision & Type
     [Blank: 1st 1: 2nd 2: 3rd 3: 4th L: PC66 T:PC100 ]
12. Power
     [G: Auto & Self refresh F: Auto & Self refresh with Low power ]
13. Min. Cycle Time (Max. Frequency)
     7: 7ns (143MHz)
     8: 8ns (125MHz)
     0: 0ns (100MHz)
     L: CL3 100MHz
     H: CL2 & CL3 100MHz ]



SIMM

KM

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BBB

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DDD

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1.  Samsung Memory
2.  Module
3.  Memory Type & Edge Connector
    [1: Flash 2: MASK ROM 3: DRAM DIMM 4: DRAM 8 byte SODIMM 5: Old      JEDEC DRAM SIMM 6: SRAM 7: New JEDEC DRAM SIMM 8: ASSP
     9: VRAM ]
4.  Organization
     8/9: x8/x9 bit
     32/36: x32/x36 bit
     39/40: x39/x40 bit
     64/72: x64/x72 bit
     144: x144 ]
5.  Process & Operating Voltage
    [Blank: CMOS 5V V: CMOS 3.3V S: Sync. 3.3V ]
6.  Density
     [32: 32M 16: 16M 8: 8M 4: 4M 2: 2M 1: 1M 512: 512K 256: 256K ]
7.  Refresh
     [0: 4K Cycle 1: 2K Cycle 2: 1K Cycle 8: 8K Cycle ]
8.  Power Consumption
     [0: Normal 2: Low Power & Self Refresh 4: Super Low      Power ]
9.  Operation & Organization
     0: F/P
     1: Nibble
     2: Static Column
     3: Using Quad CAS
     4: Using EDO
     5: Using EDO & Quad CAS
     8: Using Non Memory Logic
     9: Using Non Memory Logic & Quad CAS
10. Component Revision
     [Blank: None A: 1st Gen. B: 2nd Gen. C: 3rd Gen. ]
11. Package Type
     [Blank: SOJ(1st) K: SOJ(2nd) T: TSOP(1st) S: TSOP(2nd) ]
12. PCB Revision
     [Blank: None 1: 1st Rev. 2: 2nd Rev. 3: 3rd Rev. ]
13. Number of Components
     Blank: More than 7 chips
     N: Less than 8 chips
     U: Byte wide Base W: Word wide base
14. Only x32 or x33 PCB [V: x32 or x33 PCB ]
15. Lead Finish & Customer
     Blank: Solder
     G: Gold D: DEC H: HP M: IBM P: Nickel Q: Compaq X: Cambex
16. Speed [5: 50ns 6: 60ns 7: 70ns ]



DIMM

KM

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1.  Samsung Memory
2.  Module
3.  Memory Type & Edge Connector
    1: Flash
    2: MASK ROM
    3: DRAM DIMM
    4: DRAM 8 byte SODIMM
    5: Old JEDEC DRAM SIMM
    6: SRAM
    7: New JEDEC DRAM SIMM
    8: ASSP
    9:  VRAM ]
4.  Data Bit
     8/9: x8/x9 bit
     32/36: x32/x36 bit
     39/40: x39/x40 bit
     64/72: x64/x72 bit  
     66/74: x64/x72 unbuffered DIMM
     144: x144 bit ]
5.  Mode/Feature & Process & Operating Voltage
    [C: F/P, 5V
     V: F/P, 3.3V
     E: EDO, 5V
     F: EDO, 3.3V
     W: Window RAM, 5V
     S: Sync., 3.3V
     G: Sync. Graphic,3.3V
6.  Density
     [1: 1M 2: 2M 4: 4M 8: 8M 16: 16M 32: 32M ]
7.  Refresh
     [0: 4K Cycle 1: 2K Cycle 2: 1K Cycle 8: 8K Cycle ]
8.  Composition Component
     0: x4    
     1: x4 + x1
     2: x4 + x4(Quad CAS)
     3: x8
     4: x16      
     5: x16 + x4(Quad CAS)
     6: x9 Parity DIMM
     7: x18 Parity DIMM
     8: x9 ECC DIMM
     9: x18 ECC DIMM ]
9.  Component Revision
     [Blank: None A: 1st Gen. B: 2nd Gen. C: 3rd Gen. ]
10. Package Type & Lead Finish & Customer
     [J: SOJ(1st) & Gold K: SOJ(2nd) & Gold
     T: TSOP(1st) & Gold S: TSOP(2nd) & Gold ]
11. PCB Revision [Blank: None 1: 1st Rev. 2: 2nd Rev. 3: 3rd Rev. ]
12. Power [Blank: Normal L: Low Power & Self Refresh ]
13. Speed (Refer to #5 Mode/Feature & Process)
     1) Using C, V, E, F 5: 50ns 6: 60ns 7: 70ns
     2) Using W, S, G 0: 10ns 2: 12ns


   D램 식별 방법(LG 램의 경우)
 

G

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1. 18 : 용량을 표시하는데 이 모델의 경우 16M byte를 나타냄.
    ※16Mbyte에는 3가지가 있습니다.
    16 / 17 / 18 : 3가지가 있는데 Refresh와 컨트롤러에 따라 구분합니다.
2. 16 : I/O를 나타냄. BY 16 (16Bit)type임을 나타내는 것입니다.
3. 3 : 메모리 종류를 구분함.
    ※ 0 : Standard MEM. 3 : EDO MEM.
    ※ - 모듈(기판)에 10 이 적혀있는 모델도 EDO MEM임, 단품이 EDO이면
       모듈도 EDO메모리임.
4. 6 : 메모리 속도를 나타냄.
    ※ 6 : 60 ns(나노초), 7 : 70 ns, 8 : 80 ns.

168핀 램 식별 방법(삼성, 현대, LG 램의 경우)  

삼성 168PIN
KM48S8030BT-GH (8M*08=64M)
KM416S4030BT-G10 (4M*16=64M)
KM48S202CT-GL (2M*08=16M)

현대 168PIN
HY57V658020ALTC-10P (8M*08=64M)
HY57V198010CTC-10S (2M*08=16M)

LG 168PIN
GM72V66841CT7J (8M*08=64M)
GM72V6641CT-7J (4M*16=64M)

2009/03/27 17:53 2009/03/27 17:53
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